Reactive Ion Etching（RIE)0604102-178
A technique that combines etching with corrosive gas and sputtering
Under reactive ion etching, the material is removed selectively in
the vertical direction under the mask by both chemical reaction and physical bombardment (sputtering)
with ions and radicals produced in plasma. Distinguished from anisotropic etching wherein the
direction of erosion depends on the crystal orientation of the material, in RIE the direction of
removal is determined by the direction of ion stream. RIE results less undercuts erosion from the
edge beneath the mask than wet etching.